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Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy.
- Source :
-
Journal of Applied Physics . 1/1/1993, Vol. 73 Issue 1, p448. 8p. 5 Black and White Photographs, 2 Diagrams, 2 Charts, 10 Graphs. - Publication Year :
- 1993
-
Abstract
- Provides information on a study that reported the growth of gallium nitride films using the electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy method. Methodologies used; Results and discussion; Conclusions.
- Subjects :
- *GALLIUM nitride
*THIN films
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 73
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7650925
- Full Text :
- https://doi.org/10.1063/1.353870