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Determination of the lattice contraction of boron-doped silicon.

Authors :
Holloway, H.
McCarthy, S. L.
Source :
Journal of Applied Physics. 1/1/1993, Vol. 73 Issue 1, p103. 9p. 1 Diagram, 3 Charts, 8 Graphs.
Publication Year :
1993

Abstract

Provides information on a study that determined the change in lattice constant when single-crystal silicon is substitutionally doped with boron. Details on the analysis of diffractometric measurements; Experimental techniques used; Results and discussion on the study; Conclusions.

Details

Language :
English
ISSN :
00218979
Volume :
73
Issue :
1
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7650933
Full Text :
https://doi.org/10.1063/1.353886