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Determination of the lattice contraction of boron-doped silicon.
- Source :
-
Journal of Applied Physics . 1/1/1993, Vol. 73 Issue 1, p103. 9p. 1 Diagram, 3 Charts, 8 Graphs. - Publication Year :
- 1993
-
Abstract
- Provides information on a study that determined the change in lattice constant when single-crystal silicon is substitutionally doped with boron. Details on the analysis of diffractometric measurements; Experimental techniques used; Results and discussion on the study; Conclusions.
- Subjects :
- *LATTICE dynamics
*CRYSTALS
*SILICON
*DOPED semiconductor superlattices
*BORON
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 73
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7650933
- Full Text :
- https://doi.org/10.1063/1.353886