High-field tunneling calculations in metal-oxide-silicon capacitors incorporating the perimeter effect.

Authors :: Hook, Terence B.
Ma, T.-P.
Source :: Journal of Applied Physics. 6/1/1986, Vol. 59 Issue 11, p3881. 9p. 3 Diagrams, 2 Charts, 7 Graphs.
Publication Year :: 1986
Abstract: Describes a method by which the Schwartz-Christoffel transformation has been applied to the metal-oxide-semiconductor capacitor structure in order to calculate the high-field tunneling current in such a device. Features of the generalized model of the capacitor; Description of high field enhancement factors; Mechanism of high-field tunneling into silicon dioxide.

Subjects :: *SEMICONDUCTORS
*SCHWARTZ distributions
*CHRISTOFFEL-Darboux formula
*SILICA

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