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The effect of metal surface passivation on the Au-InP interaction.
- Source :
-
Journal of Applied Physics . 3/1/1989, Vol. 65 Issue 5, p2111. 5p. 9 Black and White Photographs, 1 Diagram, 1 Graph. - Publication Year :
- 1989
-
Abstract
- Studies the effect of silicon dioxide encapsulation on reaction rates in the gold -indium phosphide (Au-InP) system. Requirement of gold-based contact systems used as metalization materials for InP solar cells; Description the Au-InP interaction mechanism; Use of scanning electron microscopy and x-ray photoelectron spectroscopy to investigate surface and interface morphologies and in-depth compositional profiles.
- Subjects :
- *SILICA
*GOLD
*INDIUM phosphide
*SOLAR cells
*X-ray spectroscopy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 65
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7652124
- Full Text :
- https://doi.org/10.1063/1.343417