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GaAs bidirectional bistability switch using double triangular barrier structures.
- Source :
-
Journal of Applied Physics . 3/1/1994, Vol. 75 Issue 5, p2695. 4p. - Publication Year :
- 1994
-
Abstract
- Reports on the experimental results of a bidirectional bistability switching device using gallium arsenide double triangular barrier structures prepared by molecular beam epitaxy. Previous studies on negative differential resistance; Device growth and fabrication; Discussion on the results of the experiment.
- Subjects :
- *SWITCHING circuits
*GALLIUM arsenide
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 75
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7653094
- Full Text :
- https://doi.org/10.1063/1.357020