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Deep levels in Si- and Be-coimplanted GaAs.

Authors :
Cho, Hoon Young
Kim, Eun Kyu
Min, Suk-Ki
Source :
Journal of Applied Physics. 7/15/1991, Vol. 70 Issue 2, p661. 4p. 5 Graphs.
Publication Year :
1991

Abstract

Presents a study that investigated the deep levels and electrical properties in silicon and beryllium-coimplanted semi-insulating gallium arsenide. Experimental procedures; Results; Discussion.

Subjects

Subjects :
*GALLIUM arsenide
*SILICON
*BERYLLIUM

Details

Language :
English
ISSN :
00218979
Volume :
70
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7653894
Full Text :
https://doi.org/10.1063/1.349670
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