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InGaAs-GaAs-AlGaAs strained-layer laser with heavy silicon doping.

Authors :
Sin, Y. K.
Hsieh, K. Y.
Lee, J. H.
Hwang, Y.
Kolbas, R. M.
Source :
Journal of Applied Physics. 7/15/1991, Vol. 70 Issue 2, p568. 6p. 2 Charts, 2 Graphs.
Publication Year :
1991

Abstract

Presents a study that examined the photoluminescence characteristics of n- and p-type pseudomorphic InGaAs-GaAs-AlGaAs single and multiple-quantum-well heterostructures. Experiment conducted; Results; Discussion.

Subjects

Subjects :
*PHOTOLUMINESCENCE
*HETEROSTRUCTURES

Details

Language :
English
ISSN :
00218979
Volume :
70
Issue :
2
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7653910
Full Text :
https://doi.org/10.1063/1.349657
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