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On the measurement of excess carrier lifetime in semiconductors by the use of penetrating radiation.
- Source :
-
Journal of Applied Physics . 11/15/1987, Vol. 62 Issue 10, p4324. 2p. - Publication Year :
- 1987
-
Abstract
- Discusses the use of penetrating radiation in the measurement of excess carrier lifetime in semiconductors. Assumptions required for the detailed procedure of the photoconductivity decay method; Results of the experiment regarding the scattering of penetrating light; Information on the photocurrent technique of lifetime measurement.
- Subjects :
- *RADIATION
*EXCESS carriers (Solid state physics)
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 62
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654521