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Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing.
- Source :
-
Journal of Applied Physics . 10/15/1985, Vol. 58 Issue 8, p3252. 3p. 5 Graphs. - Publication Year :
- 1985
-
Abstract
- Presents a study which investigated the electrical activation of implanted beryllium, magnesium, zinc, and cadmium in gallium arsenide (GaAS) by rapid thermal annealing (RTA). Details of experimental techniques used; Overview of previous reports on RTA activation of implants in GaAs.
- Subjects :
- *RAPID thermal processing
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 58
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7654609
- Full Text :
- https://doi.org/10.1063/1.335782