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Electrical activation of implanted Be, Mg, Zn, and Cd in GaAs by rapid thermal annealing.

Authors :
Pearton, S. J.
Cummings, K. D.
Vella-Coleiro, G. P.
Source :
Journal of Applied Physics. 10/15/1985, Vol. 58 Issue 8, p3252. 3p. 5 Graphs.
Publication Year :
1985

Abstract

Presents a study which investigated the electrical activation of implanted beryllium, magnesium, zinc, and cadmium in gallium arsenide (GaAS) by rapid thermal annealing (RTA). Details of experimental techniques used; Overview of previous reports on RTA activation of implants in GaAs.

Details

Language :
English
ISSN :
00218979
Volume :
58
Issue :
8
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7654609
Full Text :
https://doi.org/10.1063/1.335782