Monolithic integrated photoreceiver for 1.3–1.55-μm wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy.

Presents information on a study which evaluated a monolithic integrated circuit associating a Schottky photodiode and a field-effect transistor which has been fabricated for the first time, on gallium[sub0.49]indium[sub0.51]phosphorus/gallium[0.47]indium[sub0.53]arsenic strained heteroepitaxial material. Description of the dark current of the photodiode under reverse bias voltage; Measurement of photodiode capacitance; Proposed improvements to obtain better performance of the device.