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The formation of hydrogen passivated silicon single-crystal surfaces using ultraviolet cleaning and HF etching.
- Source :
-
Journal of Applied Physics . 10/1/1988, Vol. 64 Issue 7, p3516. 6p. 2 Black and White Photographs, 1 Diagram, 2 Charts, 8 Graphs. - Publication Year :
- 1988
-
Abstract
- Develops a new procedure to prepare the clean surface of a silicon single crystal. Tests which proved that prepared surface has a hydrogen monoatomic layer; Effect of hydrogen termination; Manner of removing the oxide layer in a silicon single-crystal held in the air.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 64
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655685
- Full Text :
- https://doi.org/10.1063/1.341489