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The influence of growth conditions on sulfur and selenium incorporation in Ga1-xAlxAs grown by molecular-beam epitaxy.
- Source :
-
Journal of Applied Physics . 8/1/1986, Vol. 60 Issue 3, p1009. 6p. 2 Diagrams, 4 Graphs. - Publication Year :
- 1986
-
Abstract
- Deals with a study which demonstrated the use of an electrochemical cell as a source of chalcogem dimers for n-type doping of Ga[sub1-x]Al[subx]As films grown by molecular-beam epitaxy. Experimental details; Results; Discussion.
- Subjects :
- *ELECTRIC batteries
*SEMICONDUCTOR doping
*MOLECULAR beam epitaxy
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 60
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7655783
- Full Text :
- https://doi.org/10.1063/1.337389