Study of Schottky contacts on n-Ga0.51In0.49P by low-pressure metal-organic chemical-vapor deposition.

Authors :: Chang, Edward Y.
Lai, Yeong-Lin
Lin, Kun-Chuan
Chang, Chun-Yen
Source :: Journal of Applied Physics. 11/1/1993, Vol. 74 Issue 9, p5622. 4p. 3 Charts, 6 Graphs.
Publication Year :: 1993
Abstract: Presents a study which investigated the Schottky contacts on Ga[sub0.51]In[0.49]P epitaxial layer. Methodology used to determine the barrier heights of the Schottky diodes; Current-voltage characteristics of the Schottky diodes; Results of the study.

Subjects :: *DIODES
*EPITAXY
*METAL semiconductor field-effect transistors
*GALLIUM compounds

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