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Study of defects in silicon dioxide films on Si(100) by a variable-energy positron beam.
- Source :
-
Journal of Applied Physics . 11/1/1993, Vol. 74 Issue 9, p5406. 4p. 1 Chart, 3 Graphs. - Publication Year :
- 1993
-
Abstract
- Presents a study which investigated the defects of amorphous silicon dioxide films grown by thermal and plasma chemical vapor deposition in a tetraethylorthosilicate and oxygen atmosphere. DOppler broadening parameter in the silicon dioxide film; Experimentation on the oxidation of identical wafer; Results of the angular correlation of annihilation radiation.
- Subjects :
- *AMORPHOUS semiconductors
*SILICA
*THIN films
*OXIDATION
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 74
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7657037
- Full Text :
- https://doi.org/10.1063/1.354246