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Solid state reaction of Co,Ti with epitaxially-grown Si1-xGex film on Si(100) substrate.
- Source :
-
Journal of Applied Physics . 2/1/1995, Vol. 77 Issue 3, p1086. 7p. - Publication Year :
- 1995
-
Abstract
- Presents a study that examined the solid state reaction of cobalt-titanium with an epitaxially grown silicon-germanium strained layer. Use of rapid thermal annealing system; Measurement of electrical resistivity and Hall effect of the compound; Background of crystalline silicon-germanium.
- Subjects :
- *COBALT compounds
*EPITAXY
*THERMAL analysis
*HALL effect
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7658923
- Full Text :
- https://doi.org/10.1063/1.358969