Cite
Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors.
MLA
Deng, F., et al. “Strain-Induced Band-Gap Modulation in GaAs/AlGaAs Quantum-Well Structure Using Thin-Film Stressors.” Journal of Applied Physics, vol. 79, no. 3, Feb. 1996, p. 1763. EBSCOhost, https://doi.org/10.1063/1.360966.
APA
Deng, F., Liu, Q. Z., Yu, L. S., Guan, Z. F., Lau, S. S., Redwing, J. M., Geisz, J., & Kuech, T. F. (1996). Strain-induced band-gap modulation in GaAs/AlGaAs quantum-well structure using thin-film stressors. Journal of Applied Physics, 79(3), 1763. https://doi.org/10.1063/1.360966
Chicago
Deng, F., Q. Z. Liu, L. S. Yu, Z. F. Guan, S. S. Lau, J. M. Redwing, J. Geisz, and T. F. Kuech. 1996. “Strain-Induced Band-Gap Modulation in GaAs/AlGaAs Quantum-Well Structure Using Thin-Film Stressors.” Journal of Applied Physics 79 (3): 1763. doi:10.1063/1.360966.