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p-type ion-implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn.

Authors :
Zolper, J. C.
Klem, J. F.
Howard, A. J.
Hafich, M. J.
Source :
Journal of Applied Physics. 2/1/1996, Vol. 79 Issue 3, p1365. 6p. 1 Chart, 10 Graphs.
Publication Year :
1996

Abstract

Presents information on a study which investigated the p-type ion-implantation doping of aluminum[sub0.75] gallium[sub0.25] antimony. Experimental procedure; Results; Discussion.

Subjects

Subjects :
*ION implantation
*ALUMINUM
*GALLIUM
*ANTIMONY

Details

Language :
English
ISSN :
00218979
Volume :
79
Issue :
3
Database :
Academic Search Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
7659013
Full Text :
https://doi.org/10.1063/1.361034
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