Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n-channel transistors: Latent defects and passivation/depassivation of defects by hydrogen.

Presents information on a study which examined evidence for hydrogen passivation and depassivation of plasma-charging-induced defects in gate oxides and a oxide/silicon interfaces in submicron n-channel transistors. Methodology of the study; Results and discussion; Conclusion.