Cite
Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces.
MLA
Liu, Q., et al. “Growth Temperature Dependent Band Alignment at the Ga0.51In0.49P to GaAs Heterointerfaces.” Journal of Applied Physics, vol. 79, no. 1, Jan. 1996, p. 305. EBSCOhost, https://doi.org/10.1063/1.360945.
APA
Liu, Q., Derksen, S., Prost, W., Lindner, A., & Tegude, F. J. (1996). Growth temperature dependent band alignment at the Ga0.51In0.49P to GaAs heterointerfaces. Journal of Applied Physics, 79(1), 305. https://doi.org/10.1063/1.360945
Chicago
Liu, Q., S. Derksen, W. Prost, A. Lindner, and F. J. Tegude. 1996. “Growth Temperature Dependent Band Alignment at the Ga0.51In0.49P to GaAs Heterointerfaces.” Journal of Applied Physics 79 (1): 305. doi:10.1063/1.360945.