Growth of epitaxial β-FeSi2 on (100) silicon using Fe–Ti–Si diffusion couples.

Authors :: Larsen, K. Kyllesbech
Tavares, J.
Bender, H.
Donaton, R. A.
Lauwers, A.
Maex, K.
Source :: Journal of Applied Physics. 7/1/1995, Vol. 78 Issue 1, p599. 3p. 3 Black and White Photographs.
Publication Year :: 1995
Abstract: Deals with a study that detailed the formation of epitaxial semiconducting iron-disilicide grains using an iron-titanium bilayer on (100) silicon. Function of annealing conditions; Composition of the trilayer; Area where the cross-sectional transmission electron microscopy was carried out.