Theoretical performance limits of 2.1–4.1 μm InAs/InGaSb, HgCdTe, and InGaAsSb lasers.

Presents a study which calculated the ideal threshold current densities of IR lasers for active layers composed of indium arsenide/InGaSb superlattices, InGaAsSb quantum well quaternaries, InAsSb bulk ternaries, and HGCdTe superlattices. Formalism employed to calculate the superlattice band structure; Classes of laser structures considered in the study; Usefulness of band-structure engineering to obtain optimum laser performance.