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Carrier compensation and scattering mechanisms in p-GaSb.
- Source :
-
Journal of Applied Physics . 9/1/1996, Vol. 80 Issue 5, p2847. 7p. - Publication Year :
- 1996
-
Abstract
- Presents a study that investigated the hole transport properties of gallium antimonide with various degrees of tellurium compensation in the temperature range of 4.2-300 K. Details of the single-crystal substrates of undoped and Te-compensated p-GaSb used; Illustration of the plots of the temperature dependence of hall coefficient; Conclusions.
- Subjects :
- *TRANSPORT theory
*HOLES
*GALLIUM
*ANTIMONY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7660561
- Full Text :
- https://doi.org/10.1063/1.363135