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Influence of grain boundary scattering in the infrared response of silicide Schottky barrier diodes.
- Source :
-
Journal of Applied Physics . 4/15/1996, Vol. 79 Issue 8, p4426. 5p. 1 Diagram, 2 Charts, 3 Graphs. - Publication Year :
- 1996
-
Abstract
- Provides information on a study which examined the infrared response of polycrystalline and epitaxial cobalt silicon[sub2]/silicon Schottky diodes as a function of the silicide thickness. Influence of grain boundary scattering on the silicide; Quantum efficiency of the polycrystalline diodes.
- Subjects :
- *KIRKENDALL effect
*SCHOTTKY barrier diodes
*SILICIDES
*POLYCRYSTALS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7661550
- Full Text :
- https://doi.org/10.1063/1.361751