Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs.

Authors :: Hong, C. H.
Pavlidis, D.
Brown, S. W.
Rand, S. C.
Source :: Journal of Applied Physics. 2/15/1995, Vol. 77 Issue 4, p1705. 5p. 4 Graphs.
Publication Year :: 1995
Abstract: Presents the results of photoluminescence investigation of gallium nitride (GaN) films grown by metalorganic chemical vapor deposition on (100) gallium arsenide. Introduction to GaN; GaN growth and characterization; Experimental results and analysis of photoluminescence characteristics.

Subjects :: *PHOTOLUMINESCENCE
*GALLIUM nitride
*CHEMICAL vapor deposition
*GALLIUM arsenide

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