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Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs.
- Source :
-
Journal of Applied Physics . 2/15/1995, Vol. 77 Issue 4, p1705. 5p. 4 Graphs. - Publication Year :
- 1995
-
Abstract
- Presents the results of photoluminescence investigation of gallium nitride (GaN) films grown by metalorganic chemical vapor deposition on (100) gallium arsenide. Introduction to GaN; GaN growth and characterization; Experimental results and analysis of photoluminescence characteristics.
- Subjects :
- *PHOTOLUMINESCENCE
*GALLIUM nitride
*CHEMICAL vapor deposition
*GALLIUM arsenide
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7662057
- Full Text :
- https://doi.org/10.1063/1.358862