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Average bond energy model for determining valence-band offsets at strained heterointerfaces Si,Ge,InP,GaAs/GexSi1-x.
- Source :
-
Journal of Applied Physics . 7/15/1996, Vol. 80 Issue 2, p872. 8p. 2 Charts, 1 Graph. - Publication Year :
- 1996
-
Abstract
- Deals with a study which described the average bond energy model used to develop the determination of valence-band offset at heterojunctions. Background on semiconductor heteroconjunctions; Calculation details and results; Discussion and conclusions.
- Subjects :
- *CHEMICAL bonds
*SEMICONDUCTORS
*HETEROJUNCTIONS
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 80
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7662457
- Full Text :
- https://doi.org/10.1063/1.362896