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Calculation of the structural dependence of infrared absorption in p-type strained layer SiGe/Si quantum wells.
- Source :
-
Journal of Applied Physics . 6/15/1995, Vol. 77 Issue 12, p6646. 5p. 7 Graphs. - Publication Year :
- 1995
-
Abstract
- Presents a study which calculated the structural dependence of infrared absorption in p-type strained layer silicon germanium/silicon quantum wells. Physical models; Results and discussion.
- Subjects :
- *SILICON
*GERMANIUM
*QUANTUM wells
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 77
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7662579
- Full Text :
- https://doi.org/10.1063/1.359076