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Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor deposition.
- Source :
-
Journal of Applied Physics . 5/15/1996, Vol. 79 Issue 10, p8054. 6p. 6 Graphs. - Publication Year :
- 1996
-
Abstract
- Focuses on a study which observed the growth and electrical characterization of silicon delta-doped GaInP grown by metalorganic chemical vapor deposition. Experimental details; Results and discussion; Conclusion.
- Subjects :
- *SILICON
*SEMICONDUCTORS
*ORGANOMETALLIC compounds
*CHEMICAL vapor deposition
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 79
- Issue :
- 10
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7663063
- Full Text :
- https://doi.org/10.1063/1.362359