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Effects of leakage current on isothermal capacitance transient spectroscopy signals for midgap levels in GaAs.
- Source :
-
Journal of Applied Physics . 2/1/1990, Vol. 67 Issue 3, p1380. 4p. 7 Graphs. - Publication Year :
- 1990
-
Abstract
- Presents a study that examined leakage current effects for the midgap levels in an aluminum/ gallium arsenide semiconductor junction using isothermal capacitance transient spectroscopy. Analysis of the temperature dependence of the leakage current density; Effect of leakage current on isothermal capacitance transient spectra; Examination of the emission rate in a capacitance transient.
- Subjects :
- *ELECTRIC currents
*GALLIUM arsenide semiconductors
*SEMICONDUCTOR junctions
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 67
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7667889
- Full Text :
- https://doi.org/10.1063/1.345692