Defect states in carbon and oxygen implanted p-type silicon.

Presents a study that monitored the presence of electrically active defects in carbon[sup+] and CO[sup+] implanted boron-doped silicon using deep level transient spectroscopy and resistivity measurements. Introduction of defects by annealing; Correlation of the traps detected in the samples with multi-oxygen- and carbon-related complexes; Exponential capacitance transients following the injection pulses.