Subnanosecond far infrared photoconductivity from a GaAs/AlGaAs multiquantum well.

Authors :: de Bekker, R. E. M.
Chamberlain, J. M.
Claessen, L. M.
Wyder, P.
Stanaway, M. B.
Grimes, R. T.
Henini, M.
Hughes, O. H.
Hill, G.
Source :: Journal of Applied Physics. 8/15/1990, Vol. 68 Issue 4, p1913. 3p. 2 Charts, 1 Graph.
Publication Year :: 1990
Abstract: Presents a study that investigated the far infrared photoconductivity of gallium arsenide (GaAs)/AlGaAs multiquantum wells (MQW) doped with silicon. Information on the binding energy of an electron to a hydrogen like impurity in an MQW; Details of the continuous wave magnetospectroscopy measurement; Assessment of the time-resolved response of an MQW specimen to short impulses.

Subjects :: *GALLIUM arsenide
*QUANTUM wells
*PHOTOCONDUCTIVITY
*SPECTRUM analysis
*ELECTRONS

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