Deep levels in undoped bulk InP after rapid thermal annealing.

Authors :: Kim, Eun Kyu
Cho, Hoon Young
Yoon, Ju Hoon
Min, Suk-Ki
Jung, Young Lae
Lee, Wan Ho
Source :: Journal of Applied Physics. 8/15/1990, Vol. 68 Issue 4, p1665. 4p. 1 Chart, 6 Graphs.
Publication Year :: 1990
Abstract: Analyzes the deep levels in undoped bulk InP after rapid thermal annealing. Information on different insulating layers that form the MIS structures; Application of deep level transient spectroscopy in the study of the behavior of the rapid thermal annealed InP in metal-insulator-semiconductor (MIS) structures; Assessment of the effects of an insulating layer on interface states in the InP-MIS structure.