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High concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition.
- Source :
-
Journal of Applied Physics . 7/15/1990, Vol. 68 Issue 2, p859. 3p. 4 Graphs. - Publication Year :
- 1990
-
Abstract
- Presents a study which investigated high concentration Zn doping in InP grown by low-pressure metalorganic chemical vapor deposition. Hole concentrations obtained; Examination of the saturated zinc and hole concentrations; Increase in the saturated concentrations.
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 68
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7669442
- Full Text :
- https://doi.org/10.1063/1.346769