The effect of annealing temperature on electrical properties of Pd/n-GaSb Schottky contacts.

Authors :: Su, Y. K.
Li, N. Y.
Juang, F. S.
Wu, S. C.
Source :: Journal of Applied Physics. 7/15/1990, Vol. 68 Issue 2, p646. 3p.
Publication Year :: 1990
Abstract: Presents information on a study which analyzed the thermal stability for palladium (Pd)/n-GaSb Schottky contacts. Fabrication of Schottky diodes; Analysis of the interface transition between Pd and GaSb using Rutherford backscattering spectroscopy; Information on the current-voltage characteristics for Pd/n-GaSb Schottky diodes.

Subjects :: *PALLADIUM
*SCHOTTKY barrier diodes
*INTERFACES (Physical sciences)

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