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The influence of growth conditions on the growth rate and composition of GaAs and GaInAs alloys grown by chemical beam epitaxy.
- Source :
-
Journal of Applied Physics . 3/15/1990, Vol. 67 Issue 6, p3187. 3p. 4 Graphs. - Publication Year :
- 1990
-
Abstract
- Investigates the effect of source species, substrate temperature, substrate orientation, and group-V overpressure on the growth rate and composition of gallium arsenide (GaAs) and indium gallium arsenic (InGaAs) alloys grown by chemical beam epitaxy. GaAs growth rate against substrate temperature; GaAs partial growth rate in GaInAs alloys; GaAs partial growth rate.
- Subjects :
- *GALLIUM arsenide
*ALLOYS
*EPITAXY
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 67
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 7669593
- Full Text :
- https://doi.org/10.1063/1.345401