Leakage current behavior of SrBi[sub 2]Ta[sub 2]O[sub 9] ferroelectric thin films on different bottom electrodes.

SrBi[SUB2]Ta[SUB2]O[SUB9] thin films on various bottom electrodes/substrates such as Pt/TiO[SUB2]/SiO[SUB2]/Si (Pt) and LaNiO[SUB3]/Pt/TiO[SUB2]SiO[SUB2]/Si (LNO) were grown using the pulsed laser deposition technique. X-ray diffraction studies revealed that as-grown (at 500°C) films were crystallized in the layered structure after annealing at 800°C. Films grown on platinized silicon exhibited maximum value of remanent polarization (2P[SUBr]˜21.5μC/cm[SUP2]) with coercive field (E[SUBc]) of˜67 kV/cm. The dielectric constant and dissipation factor also decreased with the introduction of a 50 nm conducting LaNiO3 oxide electrode at the interface of Pt and SBT thin films, which might be contributed by the high resistive oxide electrode layers. The dc leakage characteristics of the films were studied at elevated temperatures and the data were fitted with the Schottky emission model. The barrier heights of the films grown on Pt and LNO substrates were estimated to be 1.27 and 1.12 eV with optical dielectric constants of 6.3 and 17, respectively. The reduction in barrier height was attributed to the lower work function of the LNO electrode. [ABSTRACT FROM AUTHOR]