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Tunable contact resistance in double-gate organic field-effect transistors
- Source :
-
Organic Electronics . Sep2012, Vol. 13 Issue 9, p1583-1588. 6p. - Publication Year :
- 2012
-
Abstract
- Abstract: A study of the contact resistance (R sd) in pentacene-based double-gate transistors is presented. In top-contact transistors, as the negative bias of the additional top-gate bias is increased, R sd decreases by over five orders of magnitude for small bottom-gate voltages. In bottom-contact transistors, R sd is reduced by about ten times for all bias values, implying improved charge transport in all operating regimes. The different tunability of R sd in top/bottom-contact transistors is attributed to different charge injection modulation by the coplanar/staggered top gate. Therefore, double-gate architecture offers a novel and effective approach to limit R sd and its relevant impacts on organic transistor. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 15661199
- Volume :
- 13
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Organic Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 77449962
- Full Text :
- https://doi.org/10.1016/j.orgel.2012.05.008