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Design of integrated current sensor for lateral IGBT power...
- Source :
-
IEEE Transactions on Electron Devices . Jul98, Vol. 45 Issue 7, p1614. 3p. 2 Diagrams, 4 Graphs. - Publication Year :
- 1998
-
Abstract
- Presents a study which proposed a design of integrated current sensor for lateral insulated-gate bipolar transistor power devices. Details on the design of the lateral current sensor; Conclusions.
- Subjects :
- *BIPOLAR transistors
*SEMICONDUCTORS
Subjects
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 45
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 779266
- Full Text :
- https://doi.org/10.1109/16.701496