Back to Search Start Over

Electrical resistivity of single crystalline <f>CeRh2Si2</f> under pressure

Electrical resistivity of single crystalline <f>CeRh2Si2</f> under pressure

Authors :
Ohashi, M.
Honda, F.
Eto, T.
Kaji, S.
Minamitake, I.
Oomi, G.
Koiwai, S.
Uwatoko, Y.
Source :
Physica B. Mar2002, Vol. 312-313, p443. 2p.
Publication Year :
2002

Abstract

The electrical resistivity of single crystalline &lt;f&gt;CeRh2Si2&lt;/f&gt; has been measured in the temperature range from 2.0 to 300 K under high pressure up to 2.3 GPa. The coefficient of &lt;f&gt;T2&lt;/f&gt; term &lt;f&gt;A(P)&lt;/f&gt; and the residual resistivity &lt;f&gt;ρ0(P)&lt;/f&gt; have been obtained as a function of pressure. It is found that &lt;f&gt;A(P)&lt;/f&gt; shows one maximum and &lt;f&gt;ρ0(P)&lt;/f&gt; show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition. [Copyright &amp;y&amp; Elsevier]

Details

Language :
English
ISSN :
09214526
Volume :
312-313
Database :
Academic Search Index
Journal :
Physica B
Publication Type :
Academic Journal
Accession number :
7793517
Full Text :
https://doi.org/10.1016/S0921-4526(01)01140-1