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Electrical resistivity of single crystalline <f>CeRh2Si2</f> under pressure
Electrical resistivity of single crystalline <f>CeRh2Si2</f> under pressure
- Source :
-
Physica B . Mar2002, Vol. 312-313, p443. 2p. - Publication Year :
- 2002
-
Abstract
- The electrical resistivity of single crystalline <f>CeRh2Si2</f> has been measured in the temperature range from 2.0 to 300 K under high pressure up to 2.3 GPa. The coefficient of <f>T2</f> term <f>A(P)</f> and the residual resistivity <f>ρ0(P)</f> have been obtained as a function of pressure. It is found that <f>A(P)</f> shows one maximum and <f>ρ0(P)</f> show two maxima near the pressure where the magnetic ordering phases disappear. The result is discussed on the basis of pressure-induced quantum phase transition. [Copyright &y& Elsevier]
- Subjects :
- *CRYSTALS
*ELECTRIC resistance
*HIGH pressure (Science)
Subjects
Details
- Language :
- English
- ISSN :
- 09214526
- Volume :
- 312-313
- Database :
- Academic Search Index
- Journal :
- Physica B
- Publication Type :
- Academic Journal
- Accession number :
- 7793517
- Full Text :
- https://doi.org/10.1016/S0921-4526(01)01140-1