Cite
Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission.
MLA
Zhang, Zhen, et al. “Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission.” IEEE Transactions on Electron Devices, vol. 59, no. 8, Aug. 2012, pp. 2027–32. EBSCOhost, https://doi.org/10.1109/TED.2012.2197399.
APA
Zhang, Z., Atkin, J., Hopstaken, M., Hatzistergos, M., Ronsheim, P., Liniger, E., Laibowitz, R., & Solomon, P. M. (2012). Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission. IEEE Transactions on Electron Devices, 59(8), 2027–2032. https://doi.org/10.1109/TED.2012.2197399
Chicago
Zhang, Zhen, Joanna Atkin, Marinus Hopstaken, Michael Hatzistergos, Paul Ronsheim, Eric Liniger, Robert Laibowitz, and Paul Michael Solomon. 2012. “Probing the Interface Barriers of Dopant-Segregated Silicide–Si Diodes With Internal Photoemission.” IEEE Transactions on Electron Devices 59 (8): 2027–32. doi:10.1109/TED.2012.2197399.