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Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach.

Authors :
Liao, Congwei
He, Changde
Chen, Tao
Dai, David
Chung, Smart
Jen, T. S.
Zhang, Shengdong
Source :
IEEE Transactions on Electron Devices. Aug2012, Vol. 59 Issue 8, p2142-2148. 7p.
Publication Year :
2012

Abstract

An integrated five-transistor/one-capacitor approach for realizing a a-Si:H thin-film transistor (TFT) gate driver operating in multiphase-clock mode is proposed and investigated. The driver needs only one large-size TFT and one small-size storage capacitor. The performance and function of the proposed driver are verified experimentally. The dependence of the performance on the device size is studied in detail. Stability of the fabricated drivers is tested using a flexible measurement scheme. Measured results show that the fabricated gate driver can work stably even though the low-level-holding TFTs have a threshold-voltage shift of 19 V. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00189383
Volume :
59
Issue :
8
Database :
Academic Search Index
Journal :
IEEE Transactions on Electron Devices
Publication Type :
Academic Journal
Accession number :
78146609
Full Text :
https://doi.org/10.1109/TED.2012.2197624