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BSIM-IMG: A Compact Model for Ultrathin-Body SOI MOSFETs With Back-Gate Control.
- Source :
-
IEEE Transactions on Electron Devices . Aug2012, Vol. 59 Issue 8, p2019-2026. 8p. - Publication Year :
- 2012
-
Abstract
- In this paper, we present an accurate and computationally efficient model for circuit simulation of ultrathin-body silicon-on-insulator MOSFETs with strong back-gate control. This work advances previous works in terms of numerical accuracy, computational efficiency, and behavior of the higher order derivatives of the drain current. We propose a consistent analytical solution for the calculation of front- and back-gate surface potentials and inversion charge. The accuracy of our surface potential calculation is on the order of nanovolts. The drain current model includes velocity saturation, channel-length modulation, mobility degradation, quantum confinement effect, drain-induced barrier lowering, and self-heating effect. The model has correct behavior for derivatives of the drain current and shows an excellent agreement with experimental data for long- and short-channel devices with 8-nm-thin silicon body and 10-nm-thin BOX. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 59
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 78146628
- Full Text :
- https://doi.org/10.1109/TED.2012.2198065