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Growth of a GaN crystal free from cracks on a (1 1 1)Si substrate by selective MOVPE
- Source :
-
Journal of Crystal Growth . Jul2002, Vol. 242 Issue 1/2, p77. 5p. - Publication Year :
- 2002
-
Abstract
- The selective growth of wurtzite GaN was performed on a (1 1 1)silicon substrate by metalorganic vapor phase epitaxy. By limiting the size of GaN to the area of 0.5 mm×0.5 mm, a single GaN crystal without cracks was obtained. As a result, the full-width at half-maximum of the (0 0 0 4) X-ray-rocking curve as well as that of the band edge emission were much reduced as compared to the samples grown by a conventional method. [Copyright &y& Elsevier]
- Subjects :
- *CRYSTAL growth
*GALLIUM nitride
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 242
- Issue :
- 1/2
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 7826725
- Full Text :
- https://doi.org/10.1016/S0022-0248(02)01352-0