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Effects of Si-ion implantation on crystallization behavior of Ge2Sb2Te5 film
- Source :
-
Thin Solid Films . Aug2012, Vol. 520 Issue 21, p6636-6641. 6p. - Publication Year :
- 2012
-
Abstract
- Abstract: Crystallization and thermal stability of Ge2Sb2Te5 (GST), the benchmark working material in phase-change non-volatile memory, were modified via Si-ion implantation. Through 5×1015 Si-ions/cm2 ion-implantation, crystallization temperature increases from 165°C to 177°C. Furthermore, the activation energy of crystallization increases from 2.9eV in the pristine film to 3.3eV and 4.0eV in films implanted with the doses of 5×1015 and 5×1016 Si-ions/cm2, respectively. Temperatures corresponding to a 10-year failure-time increase from 83°C in the pristine film to 96°C and 107°C in films implanted with 5×1015 and 5×1016 Si-ions/cm2, respectively. Thermal stability of Si-ion implanted GST thus improves significantly. It was also found that grain growth is inhibited with higher implantation doses. In the case of the 5×1016 ion/cm2 dose, the second-phase transition from face-centered cubic to hexagonal closed-packed structure of the GST is completely inhibited. However, crystallization time increases slightly due to Si-ion implantation. [Copyright &y& Elsevier]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 520
- Issue :
- 21
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 78278934
- Full Text :
- https://doi.org/10.1016/j.tsf.2012.06.067