Cite
Study of polarity effect in SiOx-based resistive switching memory.
MLA
Chang, Yao-Feng, et al. “Study of Polarity Effect in SiOx-Based Resistive Switching Memory.” Applied Physics Letters, vol. 101, no. 5, July 2012, p. 052111. EBSCOhost, https://doi.org/10.1063/1.4742894.
APA
Chang, Y.-F., Chen, P.-Y., Chen, Y.-T., Xue, F., Wang, Y., Zhou, F., Fowler, B., & Lee, J. C. (2012). Study of polarity effect in SiOx-based resistive switching memory. Applied Physics Letters, 101(5), 052111. https://doi.org/10.1063/1.4742894
Chicago
Chang, Yao-Feng, Pai-Yu Chen, Yen-Ting Chen, Fei Xue, Yanzhen Wang, Fei Zhou, Burt Fowler, and Jack C. Lee. 2012. “Study of Polarity Effect in SiOx-Based Resistive Switching Memory.” Applied Physics Letters 101 (5): 052111. doi:10.1063/1.4742894.