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Raman and photoluminescence study of magnetron sputtered amorphous carbon films
- Source :
-
Thin Solid Films . Jul2002, Vol. 414 Issue 1, p18. 7p. - Publication Year :
- 2002
-
Abstract
- The structural and optical properties of amorphous carbon films, grown by r.f.-magnetron sputtering on silicon substrates, were studied by Raman and photoluminescence spectroscopy in dependence of the substrate bias voltage Vb. The intensity ratio I(D)/I(G) of the Raman bands of disordered graphite (D-band) and graphite (G-band) decreased significantly (a) by reversing bias from positive (+10 V) to negative (−20 V) and (b) by reducing the negative bias from −200 to −120 V. The intensity ratio I(D)/I(G) exhibited an almost flat minimum in the bias-region from −120 to −20 V which is indicative of an increase of the fraction of sp3-bonded material. In the same bias-range, photoluminescence emission at 2.2–2.5 eV appeared blue-shifted and more efficient. Changes in photoluminescence energy are attributed to increase of sp3 content of the films becoming more transparent when deposited at substrate-bias between −20 and −120 V. Increase of photoluminescence intensity is probably related to increased number of defects due to increasing structural disorder. [Copyright &y& Elsevier]
- Subjects :
- *AMORPHOUS substances
*CARBON
*RAMAN effect
*PHOTOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 414
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 7855310
- Full Text :
- https://doi.org/10.1016/S0040-6090(02)00442-X