The role of PI interlayer deposited by ionized cluster beam on the electroluminescence efficiency

Thin polyimide films were deposited for hole blocking layer of EL device by the novel physical vapor deposition method, Ionized Cluster Beam Deposition (ICB). EL devices of Glass/ITO/PI/BEH-PPV/Al structure using spin coating and the ICB deposition technique were fabricated. By inserting a PI interlayer with various thickness and packing density, I–V and I–L characteristics, electroluminescence spectra and quantum efficiency of the devices were investigated in order to determine the role of the PI interlayer between ITO and BEH-PPV. [Copyright &y& Elsevier]