Boltzmann theory of engineered anisotropic magnetoresistance in (Ga,Mn)As.

We report on a theoretical study of dc transport coefficients in (Ga,Mn)As diluted magnetic semiconductor ferromagnets that accounts for quasiparticle scattering from ionized Mn[sup 2+] acceptors with a local moment S=5/2 and from nonmagnetic compensating defects. In metallic samples Boltzmann transport theory with golden rule scattering rates accounts for the principle trends of the measured difference between resistances for magnetizations parallel and perpendicular to the current. We predict that the sign and magnitude of the anisotropic magnetoresistance can be changed by strain engineering or by altering chemical composition. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]