In-situ photoluminescence monitoring of GaN in plasma exposure.

MLA

Chen, Miao-Gen, et al. “In-Situ Photoluminescence Monitoring of GaN in Plasma Exposure.” Applied Physics Letters, vol. 101, no. 7, Aug. 2012, pp. 071105-071105-4. EBSCOhost, https://doi.org/10.1063/1.4745917.

APA

Chen, M.-G., Nakamura, K., Nakano, Y., Yu, S.-J., & Sugai, H. (2012). In-situ photoluminescence monitoring of GaN in plasma exposure. Applied Physics Letters, 101(7), 071105-071105-4. https://doi.org/10.1063/1.4745917

Chicago

Chen, Miao-Gen, Keiji Nakamura, Yoshitaka Nakano, Sen-Jiang Yu, and Hideo Sugai. 2012. “In-Situ Photoluminescence Monitoring of GaN in Plasma Exposure.” Applied Physics Letters 101 (7): 071105-071105-4. doi:10.1063/1.4745917.