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Atomic Layer Deposition of Tantalum Oxide and Tantalum Silicate from Chloride Precursors.
- Source :
-
Chemical Vapor Deposition . Sep2012, Vol. 18 Issue 7-9, p225-238. 14p. - Publication Year :
- 2012
-
Abstract
- The atomic layer deposition (ALD) of Ta2O5 and TaSiO x from TaCl5, SiCl4, and H2O is reported. Both processes are influenced by the concomitant etching of Ta2O5 and TaSiO x by TaCl5. The optimum deposition temperature is found to be 250 °C for both Ta2O5 and TaSiO x. For lower deposition temperatures, the large Cl contamination leads to poor dielectric properties of the films, whereas higher temperatures lead to poor within-wafer (WiW) thickness non-uniformity due to etching. Si incorporation is limited to Si/(Si + Ta) ∼ 0.65 because of the slow adsorption kinetics of SiCl4 on SiOH-terminated surfaces. Under optimum conditions, amorphous films with good dielectric quality are obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09481907
- Volume :
- 18
- Issue :
- 7-9
- Database :
- Academic Search Index
- Journal :
- Chemical Vapor Deposition
- Publication Type :
- Academic Journal
- Accession number :
- 79650902
- Full Text :
- https://doi.org/10.1002/cvde.201106967