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Numerical Simulation of a P+ a-SiC:H/N+ Poly-Si Solar Cell with High Efficiency and Fill Factor.
- Source :
-
Chinese Physics Letters . Aug2012, Vol. 29 Issue 8, p1-4. 4p. - Publication Year :
- 2012
-
Abstract
- The P+ a-SiC:H/N+ poly-Si solar cell is simulated by an AMPS-1D device simulator to characterize the new thin film polycrystalline-silicon solar cell. In order to analyze the characteristics of the device, the thickness, working temperature, and impurity concentration for the N+ polysilicon layer are considered. The results show that the performance of the cells shows little change when the thickness of N+ polysilicon varies from 10 to 30 μm. It is concluded that the P+ a-SiC:H/N+ poly-Si solar cell has the highest performance with high open circuit voltages (Voc) of 1.31 V, high conversion efficiency of 17.363% and high fill factor of 0.884. Therefore, the P+ a-SiC:H/N+ poly-Si solar cell has promising future applications [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0256307X
- Volume :
- 29
- Issue :
- 8
- Database :
- Academic Search Index
- Journal :
- Chinese Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 79682586
- Full Text :
- https://doi.org/10.1088/0256-307X/29/8/087302